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Jun. 26, 2001
June 26, 2001 -- To support production of cutting-edge devices with 100-nm design rules, Nikon Corporation (President ; YOSHIDA, Shoichiro) has developed a new stepper -- NSR-S306C -- that incorporates lens-based scanning systems, an ultra-high N.A. lens, and an ArF Excimer laser.
The company will start receiving orders for the new system in spring 2002.
The NSR-S306C is the first system in the world to be equipped with an ultra-high N.A. lens (N.A. 0.78) that supports ArF excimer lasers (193-nm wavelength).
Throughput is at least 135 wafers per hour for 200-mm wafers and 85 wafers per hour for 300-mm wafers, the highest class in the industry.
Development Background
There are no limits to the increasing density of VLSIs, the foundation of the IT revolution.
Nowadays, we are starting 128-Mbit DRAM mass production, and efforts are under way to shift to mass production of 256-Mbit and 512-Mbit DRAMs.
To keep pace with this trend, Nikon unveiled the world's first lens-based scanning system, the NSR-S201A, in April 1995.
Since then, our lens-based scanning systems have received high marks for performance and reliability from semiconductor manufacturers throughout the world, enabling us to ship over 400 units to date, including i-line, KrF excimer laser, and ArF excimer laser models.
The first system in the world to be equipped with an ultra-high N.A. lens (N.A. 0.78), the NSR-S306C we are announcing today will meet the demands of tighter design rules as the industry accelerates from 120-nm to 100-nm applications.
Furthermore, the new system achieves the high throughput of 85 or more wafers/hr. for 300-mm wafer processing, which is gaining momentum in production lines.
Main Features
The world's first system to be equipped with an ultra-high N.A. (0.78) Lens, the NSR-S306C achieves a resolution of 120 nm or better.
Furthermore, by utilizing SHRINC technology, it can realize a resolution of 100 nm or better to support mass production of next-generation DRAMs and MPUs.
A newly developed body minimizes the effects of vibration and temperature on operation.
Throughput is improved as well: at least 135 wafers / hr. for 200-mm wafers, now the dominant standard, and 85 wafers / hr. for 300-mm wafers, the highest class in the industry. This represents an approximately 10 percent improvement over previous Nikon systems.
Main Specifications
| NSR-S306C | ||
|---|---|---|
| Resolution | 120 nm or better (Normal illumination) | |
| 100 nm or better (SHRINC (Modified illumination)) | ||
| N.A. (Numerical Aperture) | 0.78 | |
| Light Source | ArF excimer laser (Wavelength : 193 nm) | |
| Projection Magnification | 1 : 4 | |
| Alignment Accuracy | 23 nm or better (M + 3 sigma) | |
| Throughput | 200 mm wafers | 135 or more wafers / hour |
| 300 mm wafers | 85 or more wafers / hour | |
The export of this product is controlled by Japanese Foreign Exchange Trade Law and International export control regime.
They shall not be exported without authorization from the appropriate governmental authorities. June 2001
