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July 8, 2003
Nikon Corporation (President: SHIMAMURA, Teruo) has developed the Step-and-Repeat System NSR-SF200, a KrF excimer scan field stepper that effectively brings out the strengths of next-generation DRAM and MPU middle-layer exposure, and will commence sales in November 2003.
Offers excellent cost performance for 300mm wafer mass production lines at 90nm levels through mix-and-match with the lens-scanning ArF stepper. The NSR-SF200 uses a broad 26 X33mm field to achieve high resolution at 150nm.
Sales Summary
| Product name | Nikon Step-and-Repeat System NSR-SF200 |
|---|---|
| Price (excluding tax) | About 850 ~ 950 million yen (varies by spec or configuration) |
| Sales launch date | November 2003 |
Development Background
In January 2001, Nikon began taking orders for the NSR-SF100, an i-line stepper developed ahead of the rest of the industry based on the new concept of mix-and-match with lens-scanning KrF excimer steppers found on state-of-the-art semiconductor manufacturing lines. In July 2002, the NSR-SF120, which featured improved resolution and throughput, made its appearance.
The i-line stepper is optimum for exposure of the non-critical layers that account for about half of all the layers exposed on the wafer. With its adequate levels of resolution and excellent throughput on exposure fields shared with advanced scanners, the i-line stepper has won plaudits for total balance and superior cost performance, in its contribution to improvement of productivity and to reduction of the total investment costs of manufacturing lines.
The NSR-SF200, representing the next stage in this development, is the world's first KrF excimer laser scan field stepper, suitable for mix-and-match with the lens scanning ArF stepper used in 300mm wafer lines for mass production of 90nm devices. Nikon achieved the wide field projection lens used in this KrF system by incorporating the latest technology developed for the cutting-edge ArF lens.
Major Performances
| Resolution | 150nm or better |
|---|---|
| N.A. (Numerical Aperture) | 0.63 |
| Light source | KrF excimer laser (248nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 X 33mm |
| Alignment accuracy | 28nm or better (M+3σ) |
| Throughput (per hour) | 300mm wafers: 110 or more wafers 200mm wafers: 120 or more wafers |
Major Characteristics
The export of this product is controlled by Japanese Foreign Exchange Trade Law and International export control regime.
They shall not be exported without authorization from the appropriate governmental authorities.