Products archive (IC Steppers and Scanners—NSR Series)
ArF Immersion Scanners
NSR-S610C (Immersion)
| Resolution | ≦ 45 nm |
|---|---|
| NA | 1.30 |
| Exposure light source | ArF excimer laser (193 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Overlay | |M| + 3σ ≦ 6.5 nm |
| Throughput | 300 mm wafers:130 or more wafers/hour |
NSR-S609B (Immersion)
| Resolution | 55 nm or better |
|---|---|
| NA | 1.07 |
| Exposure light source | ArF excimer laser (193 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | 7 nm or better (|M| + 3σ) |
| Throughput | 300 mm wafers: 130 or more wafers/hour |
ArF Scanners
NSR-S308F
| Resolution | 65 nm or better |
|---|---|
| NA | 0.92 |
| Exposure light source | ArF excimer laser (193 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | 8 nm or better (|M| + 3σ) |
NSR-S307E
| Resolution | 80 nm or better |
|---|---|
| NA | 0.85 |
| Exposure light source | ArF excimer laser (193 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | 12 nm or better (|M| + 3σ) |
NSR-S306C
| Resolution | 100 nm or better |
|---|---|
| NA | 0.78 |
| Exposure light source | ArF excimer laser (193 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | 20 nm or better |
NSR-S305B
| Resolution | 110 nm or better |
|---|---|
| NA | 0.68 |
| Exposure light source | ArF excimer laser (193 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | 30 nm or better |
KrF Scanners/KrF Steppers
NSR-S208D
| Resolution | 110 nm or better |
|---|---|
| NA | 0.82 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | 10 nm or better (|M| + 3σ) |
| Throughput | 147 or more per hour for 300 mm wafers (Step Pitch 26 × 33 mm, 76 Shots, 8-point EGA, Exposure dose 30 mJ/cm2) |
NSR-S207D
| Resolution | 110 nm or better |
|---|---|
| NA | 0.82 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | 10 nm or better (|M| + 3σ) |
NSR-SF200
| Resolution | 150 nm or better |
|---|---|
| NA | 0.63 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | 28 nm or better (|M| + 3σ) |
| Throughput | 300 mm wafers: 110 or more wafers/hour 200 mm wafers: 120 or more wafers/hour |
NSR-S206D
| Resolution | 110 nm or better |
|---|---|
| NA | 0.82 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy | 20 nm or better (|M| + 3σ) |
NSR-S205C
| Resolution | 130 nm or better |
|---|---|
| NA | 0.75 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | 30 nm or better (FIA, LIA) |
NSR-S204B
| Resolution | 150 nm or better |
|---|---|
| NA | 0.68 |
| Exposure light source | KrF excimer laser (248 nm) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | 35 nm or better (FIA, LIA) |
NSR-S203B
| Resolution | 180 nm or better |
|---|---|
| NA | 0.68 |
| Exposure light source | KrF excimer laser (248 nm) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | 40 nm or better (FIA, LIA) |
NSR-S202A
| Resolution | 250 nm or better |
|---|---|
| NA | 0.60 |
| Exposure light source | KrF excimer laser (248 nm) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | 45 nm or better (FIA, LIA) |
NSR-2205EX14C
| Resolution | 250 nm or better |
|---|---|
| NA | 0.60 |
| Exposure light source | KrF excimer laser (248 nm) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
| Alignment accuracy (EGA, |M| + 3σ) | 50 nm or better |
| Alignment system | LSA (standard), FIA (standard), LIA (optional) |
NSR-2205EX12B
| Resolution | 280 nm or better |
|---|---|
| NA | 0.55 |
| Exposure light source | KrF excimer laser (248 nm) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
| Alignment accuracy (EGA, |M| + 3σ) | 55 nm or better |
| Alignment system | LSA (standard), FIA (standard), LIA (optional) |
NSR-S201A
| Resolution | 250 nm or better |
|---|---|
| NA | 0.60 |
| Exposure light source | KrF excimer laser (248 nm) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | 50 nm or better |
NSR-2205EX10B
| Resolution | 320 nm |
|---|---|
| Exposure light source | KrF excimer laser (248 nm) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
| Alignment accuracy (EGA, |M| + 3σ) | 80 nm or better |
i-line Steppers
NSR-SF150
| Resolution | 280 nm or better |
|---|---|
| NA | 0.62 |
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | 25 nm or better (|M| + 3σ) |
| Throughput | 300 mm wafers: 180 or more wafers/hour |
NSR-SF140
| Resolution | 280 nm or better |
|---|---|
| NA | 0.62 |
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | 35 nm or better (|M| + 3σ) (FIA) |
| Throughput | 300 mm wafers: 117 or more wafers/hour (exposure dose 200 mJ/cm2) |
NSR-SF130
| Resolution | 280 nm or better |
|---|---|
| NA | 0.62 |
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | 35 nm or better |
| Throughput | 300 mm wafers: 120 or more wafers/hour 200 mm wafers: 120 or more wafers/hour |
NSR-SF120
| Resolution | 280 nm or better |
|---|---|
| NA | 0.62 |
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy | 35 nm or better |
| Throughput | 300 mm wafers: 100 or more wafers/hour 200 mm wafers: 120 or more wafers/hour |
NSR-SF100
| Resolution | 400 nm or better |
|---|---|
| NA | 0.52 |
| Exposure light source | i-line (365 nm) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy | 45 nm or better (|M| + 3σ) |
| Throughput | 200 mm wafers: 120 or more wafers/hour 300 mm wafers: 80 or more wafers/hour |
NSR-2205i12D
| Resolution | 350 nm or better |
|---|---|
| NA | 0.63 |
| Exposure light source | i-line (365 nm) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm (6-inch reticle), 20.0 × 20.4 mm (5-inch reticle) |
| Alignment accuracy (EGA, |M| + 3σ) | 55 nm or better (LSA) |
NSR-TFHi12
| Resolution | 500 nm or better |
|---|---|
| NA | 0.30 ~ 0.45 (variable) |
| Exposure light source | i-line (365 nm) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
| Alignment accuracy (EGA, |M| + 3σ) | 55 nm or better |
NSR-2205i14E
| Resolution | 350 nm or better |
|---|---|
| NA | 0.63 |
| Exposure light source | i-line (365 nm) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
| Alignment accuracy (EGA, |M| + 3σ) | 50 nm or better |
| Alignment system | LSA (standard), FIA (standard), LIA (optional) |
NSR-4425i
| Resolution | 700 nm |
|---|---|
| Exposure light source | i-line (365 nm) |
| Reduction ratio | 1:2.5 |
| Exposure field | 44 mm square |
| Alignment accuracy (EGA, |M| + 3σ) | 100 nm or better |
NSR-2205i11D
| Resolution | 350 nm or better |
|---|---|
| NA | 0.63 |
| Exposure light source | i-line (365 nm) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
| Alignment accuracy (EGA, |M| + 3σ) | 70 nm or better |
| Alignment system | LSA (standard), FIA (optional), LIA (optional) |