Products archive (IC Steppers/Scanners—NSR Series)
ArF Immersion Scanners
NSR-S610C
| Resolution | ≦ 45 nm |
|---|---|
| NA | 1.30 |
| Exposure light source | ArF excimer laser (193 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Overlay | ≦ 6.5 nm |
| Throughput | ≧ 130 wafers/hour (300 mm wafer, 76 shots) |
NSR-S609B
| Resolution | ≦ 55 nm |
|---|---|
| NA | 1.07 |
| Exposure light source | ArF excimer laser (193 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | ≦ 7 nm |
| Throughput | ≧ 130 wafers/hour (300 mm wafer, 76 shots) |
ArF Scanners
NSR-S308F
| Resolution | ≦ 65 nm |
|---|---|
| NA | 0.92 |
| Exposure light source | ArF excimer laser (193 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | ≦ 8 nm |
NSR-S307E
| Resolution | ≦ 80 nm |
|---|---|
| NA | 0.85 |
| Exposure light source | ArF excimer laser (193 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | ≦ 12 nm |
NSR-S306C
| Resolution | ≦ 100 nm |
|---|---|
| NA | 0.78 |
| Exposure light source | ArF excimer laser (193 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 20 nm |
NSR-S305B
| Resolution | ≦ 110 nm |
|---|---|
| NA | 0.68 |
| Exposure light source | ArF excimer laser (193 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 30 nm |
KrF Scanners/KrF Steppers
NSR-S208D
| Resolution | ≦ 110 nm |
|---|---|
| NA | 0.82 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | ≦ 10 nm |
| Throughput | ≧ 147 wafers/hour (300 mm wafer, 76 shots) |
NSR-S207D
| Resolution | ≦ 110 nm |
|---|---|
| NA | 0.82 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | ≦ 10 nm |
NSR-SF200
| Resolution | ≦ 150 nm |
|---|---|
| NA | 0.63 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | ≦ 28 nm |
| Throughput | ≧ 110 wafers/hour (300 mm wafer) ≧ 120 wafers/hour (200 mm wafer) |
NSR-S206D
| Resolution | ≦ 110 nm |
|---|---|
| NA | 0.82 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy | ≦ 20 nm |
NSR-S205C
| Resolution | ≦ 130 nm |
|---|---|
| NA | 0.75 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 30 nm |
NSR-S204B
| Resolution | ≦ 150 nm |
|---|---|
| NA | 0.68 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 35 nm |
NSR-S203B
| Resolution | ≦ 180 nm |
|---|---|
| NA | 0.68 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 40 nm |
NSR-S202A
| Resolution | ≦ 250 nm |
|---|---|
| NA | 0.60 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 45 nm |
NSR-2205EX14C
| Resolution | ≦ 250 nm |
|---|---|
| NA | 0.60 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 50 nm |
| Alignment system | LSA (standard), FIA (standard), LIA (optional) |
NSR-2205EX12B
| Resolution | ≦280 nm |
|---|---|
| NA | 0.55 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 55 nm |
| Alignment system | LSA (standard), FIA (standard), LIA (optional) |
NSR-S201A
| Resolution | ≦ 250 nm |
|---|---|
| NA | 0.60 |
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 50 nm |
NSR-2205EX10B
| Resolution | ≦ 320 nm |
|---|---|
| Exposure light source | KrF excimer laser (248 nm wavelength) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 80 nm |
i-line Steppers
NSR-SF150
| Resolution | ≦ 280 nm |
|---|---|
| NA | 0.62 |
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | ≦ 25 nm |
| Throughput | ≧ 180 wafers/hour (300 mm wafer) |
NSR-SF140
| Resolution | ≦ 280 nm |
|---|---|
| NA | 0.62 |
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | ≦ 35 nm |
| Throughput | ≧ 117 wafers/hour (300 mm wafer) |
NSR-SF130
| Resolution | ≦ 280 nm |
|---|---|
| NA | 0.62 |
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 × 33 mm |
| Alignment accuracy | ≦ 85 nm |
| Throughput | ≧ 120 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer) |
NSR-SF120
| Resolution | ≦ 280 nm |
|---|---|
| NA | 0.62 |
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy | ≦ 35 nm |
| Throughput | ≧ 100 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer) |
NSR-SF100
| Resolution | ≦ 400 nm |
|---|---|
| NA | 0.52 |
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 25 × 33 mm |
| Alignment accuracy | ≦ 45 nm |
| Throughput | ≧ 80 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer) |
NSR-2205i12D
| Resolution | ≦ 350 nm |
|---|---|
| NA | 0.63 |
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm (6-inch reticle), 20.0 × 20.4 mm (5-inch reticle) |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 55 nm |
NSR-TFHi12
| Resolution | ≦ 500 nm |
|---|---|
| NA | 0.30 ~ 0.45 (variable) |
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 55 nm |
NSR-2205i14E
| Resolution | ≦ 350 nm |
|---|---|
| NA | 0.63 |
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 50 nm |
| Alignment system | LSA (standard), FIA (standard), LIA (optional) |
NSR-4425i
| Resolution | ≦ 700 nm |
|---|---|
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:2.5 |
| Exposure field | 44 mm square |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 100 nm |
NSR-2205i11D
| Resolution | ≦ 350 nm |
|---|---|
| NA | 0.63 |
| Exposure light source | i-line (365 nm wavelength) |
| Reduction ratio | 1:5 |
| Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
| Alignment accuracy (EGA, |M| + 3σ) | ≦ 70 nm |
| Alignment system | LSA (standard), FIA (optional), LIA (optional) |