Lineup

Semiconductors control a host of functions in electronic equipment. Nikon offers a stellar lineup of cutting-edge lithography systems that support precision circuit design down to the nanometer level.

ArF Immersion Scanners

Resolution ≦ 38 nm
NA 1.35
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay SMO*1: ≦ 1.5 nm, MMO*2: ≦ 2.1 nm
Throughput ≧ 275 wafers/hour (96 shots)
Resolution ≦ 38 nm
NA 1.35
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay SMO*1: ≦ 1.7 nm, MMO*2: ≦ 2.3 nm
Throughput ≧ 250 wafers/hour (96 shots),
≧ 270 wafers/hour (96 shots, optional)
Resolution ≦ 38 nm
NA 1.35
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay SMO*1: ≦ 2 nm, MMO*2: ≦ 3.5 nm
Throughput ≧ 200 wafers/hour (125 shots)

ArF Scanners

Resolution ≦ 65 nm
NA 0.92
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay SMO*1: ≦ 2 nm, MMO*2: ≦ 5 nm
Throughput ≧ 230 wafers/hour (96 shots)

KrF Scanners

Resolution ≦ 110 nm
NA 0.82
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay SMO*1: ≦ 3 nm, MMO*2: ≦ 6 nm
Throughput ≧ 230 wafers/hour (96 shots)
Resolution ≦ 110 nm
NA 0.82
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay ≦ 9 nm
Throughput ≧ 176 wafers/hour (76 shots)

i-line Steppers

Resolution ≦ 280 nm
NA 0.62
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:4
Exposure field 26 mm × 33 mm
Overlay ≦ 25 nm
Throughput ≧ 200 wafers/hour (76 shots)

Alignment Stations

Litho Booster

Litho Booster is an advanced Alignment Station that leverages proprietary Nikon technologies developed for semiconductor lithography systems. Absolute grid distortion values are measured quickly with ultra-high precision for all wafers prior to exposure. Correction values are then fed forward to the lithography system to greatly improve overlay accuracy without reducing throughput, contributing to enhanced yield and optimized equipment investments.

All of the products on this page are under export restriction. The export of these products is controlled by Japanese Foreign Exchange and Foreign Trade Law and International export control regimes. They shall not be exported without authorization from the appropriate governmental authorities.